The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2012
Filed:
Mar. 24, 2008
Applicants:
Kazuo Takata, Kudamatsu, JP;
Yutaka Kudou, Kudamatsu, JP;
Satoshi Tani, Kudamatsu, JP;
Inventors:
Assignee:
Hitachi High-Technologies Corporation, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
The invention provides an etching method for realizing trench etching without causing any damages to the side walls of the trench while maintaining a high-etching rate. The plasma etching method relates to forming a groove or a hole by forming a silicon trench to a silicon substrate or a silicon substrate having a silicon oxide dielectric layer via a mixed gas plasma containing a mixed gas of SFand Oor a mixed gas of SF, Oand SiFand having added thereto a gas containing hydrogen within the range of 5 to 16% (percent concentration) of the total gas flow rate of the mixed gas.