The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2010
Filed:
Aug. 17, 2006
Yuji Kato, Okazaki, JP;
Eiji Ishikawa, Okazaki, JP;
Yutaka Kudou, Kudamatsu, JP;
Satoshi Tani, Kudamatsu, JP;
Kazuo Takata, Kudamatsu, JP;
Yuji Kato, Okazaki, JP;
Eiji Ishikawa, Okazaki, JP;
Yutaka Kudou, Kudamatsu, JP;
Satoshi Tani, Kudamatsu, JP;
Kazuo Takata, Kudamatsu, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A method of etching for forming a groove in a SOI substrate includes a forming step, in which a mixed gas plasma is formed by using a mixed gas of a fluorinate gas and an oxygenic gas, and an applying step, in which a high-frequency bias is intermittently applied to the SOI substrate. In the applying step, the high-frequency bias is a temporally modulated high-frequency electricity. According to the method of etching, a yielding rate and a productivity can be improved.