The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2003
Filed:
Sep. 06, 2001
Applicant:
Inventors:
Go Saito, Hikari, JP;
Masamichi Sakaguchi, Kudamatsu, JP;
Hitoshi Kobayashi, Tokuyama, JP;
Motohiko Yoshigai, Hikari, JP;
Satoshi Tani, Kudamatsu, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/1302 ;
Abstract
The temperature of the specimen holder in the vacuum container is lowered with the thermal control unit to adjust the temperature of the specimen composed of a silicon substrate to a low temperature of 0° C. or lower. Then, trenches are formed in the specimen by plasma etching using an etching gas comprising SF as the main constituent and optionally O as an additive. Thus, the etching rate and the yield can be increased in the trench formation in the silicon semiconductor substrate.