Sarasvathi Thangaraju

Title: Innovations of Sarasvathi Thangaraju

Introduction

Sarasvathi Thangaraju is a prominent inventor based in Malta, NY (US). She has made significant contributions to the field of semiconductor technology, holding a total of 8 patents. Her work focuses on enhancing the performance and reliability of semiconductor devices.

Latest Patents

One of her latest patents is titled "Through silicon via device having low stress, thin film gaps and methods for forming the same." This invention relates to approaches for forming a semiconductor device, specifically a TSV device that includes a 'buffer zone' or gap layer. This gap layer is filled with low-stress, thin film material that helps control stresses and crack formation in the devices. It also ensures a spatial distance between TSVs and transistors, reducing the adverse effects of temperature excursions.

Another notable patent is "Integrated circuits and methods of forming the same with metal layer connection to through-semiconductor via." This patent describes methods for forming integrated circuits where multiple semiconductor devices are created on a substrate. It involves forming a through-semiconductor via and an interlayer dielectric layer, with specific patterns etched to facilitate electrical communication through embedded interconnect vias.

Career Highlights

Sarasvathi Thangaraju is currently employed at GlobalFoundries Inc., a leading semiconductor manufacturer. Her innovative work has positioned her as a key player in the development of advanced semiconductor technologies.

Collaborations

Throughout her career, she has collaborated with notable colleagues, including Guoxiang Ning and Paul Willard Ackmann. These collaborations have further enhanced her contributions to the field.

Conclusion

Sarasvathi Thangaraju's innovative patents and career at GlobalFoundries Inc. highlight her significant impact on semiconductor technology. Her work continues to advance the field and improve the performance of electronic devices.