The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8895211 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 25, 2014

Filed:

Dec. 11, 2012
Applicant:

Globalfoundries, Inc., Grand Cayman, KY;

Inventors:

Guoxiang Ning, Clifton Park, NY (US);

Chunyu Wong, Ballston Lake, NY (US);

Paul Ackmann, Gansevoort, NY (US);

Sarasvathi Thangaraju, Malta, NY (US);

Assignee:

GLOBALFOUNDRIES, Inc., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/26 (2012.01);
U.S. Cl.
CPC ...
G03F 1/26 (2013.01);
Abstract

A mask is disclosed which includes a plurality of first phase shift regions disposed on a first side of the mask, and a plurality of second phase shift regions disposed on a second side of the mask. The first phase shift regions and second phase shift regions may be alternating phase shift regions in which phase shift of the first phase shift regions is out of phase, for instance by 180 degrees, from phase shift of the second phase shift regions. A method for forming the mask, and a semiconductor device fabrication method using the mask is also disclosed.


Find Patent Forward Citations

Ning, Guoxiang. (2014). Semiconductor device resolution enhancement by etching multiple sides of a mask (U.S. Patent No. 8895211). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8895211

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