Shanghai, China

Sannian Song

This inventor holds 4 USPTO granted patents and 2 published patent applications. Top assignees: Southern University of Science and Technology, Chinese Academy of Sciences, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Scienc. Active years: 2019-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sannian Song. Retrieved from https://idiyas.com/inventor/sannian-song

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 4 

% Patents Active = 100.0

Average Co-Inventor Count = 3.2

ph-index = 1


Company Filing History:


Years Active: 2019-2025

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4 patents (USPTO):Explore Patents

Title: Innovations of Sannian Song

Introduction

Sannian Song is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of electronics, particularly in the development of advanced protection circuits and memory technologies. With a total of four patents to his name, his work reflects a commitment to innovation and technological advancement.

Latest Patents

One of Sannian Song's latest patents is focused on electrostatic discharge (ESD) protection circuits. This invention discloses an ESD protection circuit comprising resistor vias. It includes a plurality of ESD devices connected in parallel, with each device consisting of a resistor and a two-terminal switch, such as an OTS component, connected in series. The resistor is formed in a resistor via disposed vertically with the two-terminal switch and filled with a conductive material that has high resistivity.

Another notable patent is related to phase change memory and the method for making the same. This patent provides a phase change memory that includes a substrate, a plurality of phase change memory cells, and an isolation material layer. The memory cells are separately disposed on the substrate and include multiple layers, such as electrode materials and transition materials, which are essential for the functionality of the memory. The isolation material layer surrounds the side surfaces of the memory cells, ensuring they are isolated from each other.

Career Highlights

Sannian Song has worked at esteemed institutions such as the Southern University of Science and Technology and the Chinese Academy of Sciences. His experience in these organizations has allowed him to collaborate with leading experts in the field and contribute to groundbreaking research.

Collaborations

Some of his notable coworkers include Zhitang Song and Guobiao Zhang. Their collaborative efforts have further advanced the research and development of innovative technologies.

Conclusion

Sannian Song's contributions to the field of electronics through his patents and collaborations highlight his role as a significant inventor. His work continues to influence advancements in ESD protection and memory technologies.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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