Southern University of Science and Technology

Chinese Academy of Sciences

Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Scienc

Sannian Song

Zhitang Song

Guobiao Zhang

Hongyu Yu

Xiaogang Chen

Tianqi Guo

The present invention discloses an ESD protection circuit comprising resistor vias. It comprises a plurality of ESD devices connected in parallel, with each ESD device comprising a resistor and a two-terminal switch (e.g. an OTS component) connected in series. The resistor is formed in a resistor via disposed vertically with the two-terminal switch and filled with at least a conductive material with high resistivity.

Electrostatic discharge (ESD) protection circuits

The present disclosure provides a phase change memory and a method for making the same. The phase change memory includes a substrate, a plurality of phase change memory cells, and an isolation material layer. The plurality of phase change memory cells are separately disposed on the substrate, the phase change memory cell sequentially includes, from bottom to top, a first electrode material layer, a first transition material layer, an ovonic threshold switching (OTS) material layer, a second transition material layer, a second electrode material layer, a third transition material layer, a phase change material layer, a fourth transition material layer, and a third electrode material layer; The isolation material layer is disposed on the substrate and surrounds side surfaces of the phase change memory cell, and the plurality of phase change memory cells are isolated from each other by isolation material layer.

Phase change memory and method for making the same

The present invention discloses parallel, series and hybrid ESD protection circuits. A preferred parallel ESD protection circuit comprises a plurality of ESD devices connected in parallel, with each comprising a resistor and an OTS component connected in series. A preferred series ESD protection circuit comprises a plurality of ESD devices connected in series, wherein the OTS components in all ESD devices are disposed on a same level. A preferred hybrid ESD protections circuit comprises ESD devices connected in parallel, as well as in series.

A storage array and a storage chip and method for storing a logic relationship between objects. The storage array comprises first leading-out wires and second leading-out wires, and a storage unit is connected between each first leading-out wire and each second leading-out wire having different serial numbers. A controllable switch is connected between each first leading-out wire and each second leading-out wire having a same serial number. The storage chip comprises an interface module. A control module is used for producing a control signal. A driving module is used for producing write current, erase current or read current. A first decoder and a second decoder are used for gating the first leading-out wires and the second leading-out wires. A storage array is used for storing a logic relationship value. The storage method comprises write and read operations.

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Shanghai, China

Sannian Song