The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2025
Filed:
Nov. 04, 2019
Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, Shanghai, CN;
Zhitang Song, Shanghai, CN;
Sannian Song, Shanghai, CN;
Abstract
The present disclosure provides a phase change memory and a method for making the same. The phase change memory includes a substrate, a plurality of phase change memory cells, and an isolation material layer. The plurality of phase change memory cells are separately disposed on the substrate, the phase change memory cell sequentially includes, from bottom to top, a first electrode material layer, a first transition material layer, an ovonic threshold switching (OTS) material layer, a second transition material layer, a second electrode material layer, a third transition material layer, a phase change material layer, a fourth transition material layer, and a third electrode material layer; The isolation material layer is disposed on the substrate and surrounds side surfaces of the phase change memory cell, and the plurality of phase change memory cells are isolated from each other by isolation material layer.