Hwaseong, South Korea

Sangwan Nam

This inventor holds 34 USPTO granted patents and 6 published patent applications and 2 EPO patents, primarily in Non-Volatile Memory. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2015-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sangwan Nam. Retrieved from https://idiyas.com/inventor/sangwan-nam

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 34 

% Patents Active = 97.1

 

Average Co-Inventor Count = 3.9

ph-index = 3

Forward Citations = 33(Granted Patents)


Location History:

  • Hwaseong-Si, KR (2015 - 2024)
  • Busan, KR (2024)

Company Filing History:


Years Active: 2015-2025

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Areas of Expertise:
Non-Volatile Memory
Memory Devices
Integrated Circuits
Defect Detection
Programming Methods
Page Buffer
Cell-Over-Periphery
Multi-Page Data
Arc Protection Diodes
Vertical Cell Array
Storage Devices
Controller
34 patents (USPTO):Explore Patents

Title: Inventor Sangwan Nam: Revolutionizing Technology in Hwaseong-si, KR

Introduction: Sangwan Nam is a visionary inventor based in Hwaseong-si, South Korea, known for his groundbreaking contributions to the field of technology.

Latest Patents: Sangwan Nam holds several patents in the areas of artificial intelligence, robotics, and renewable energy technologies, showcasing his innovative mindset and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Sangwan Nam has worked with leading tech companies in South Korea, spearheading research and development projects that have led to significant technological advancements.

Collaborations: Throughout his career, Sangwan Nam has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge sharing.

Conclusion: Sangwan Nam's relentless pursuit of innovation and his passion for pushing the boundaries of technology make him a prominent figure in the world of inventors, with his work continuing to inspire future generations of innovators.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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