The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2024

Filed:

Sep. 29, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Wandong Kim, Siheung-si, KR;

Jinyoung Kim, Seoul, KR;

Sehwan Park, Yongin-si, KR;

Hyun Seo, Goyang-si, KR;

Sangwan Nam, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G06F 11/07 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01); G11C 11/56 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G06F 11/0727 (2013.01); G06F 11/0757 (2013.01); G06F 11/076 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01); G11C 11/56 (2013.01); G11C 16/34 (2013.01);
Abstract

An operating method of a nonvolatile memory device for programming multi-page data, the operating method including: receiving the multi-page data from a memory controller; programming first page data among the multi-page data to first memory cells connected to a word line adjacent to a selected word line; reading previous page data previously stored in second memory cells connected to the selected word line based on a first sensing value and a second sensing value after programming the first page data; calculating a first fail bit number by comparing first bits of the previous page data read based on the first sensing value to second bits of the previous page data read based on the second sensing value; and programming the previous page data read from the second memory cells and second page data among the multi-page data to the second memory cells based on the first fail bit number.


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