The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 2024

Filed:

May. 26, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hongsoo Jeon, Suwon-si, KR;

Bongsoon Lim, Seoul, KR;

Sangwan Nam, Busan, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 5/06 (2006.01); G11C 16/08 (2006.01); G11C 16/20 (2006.01);
U.S. Cl.
CPC ...
G11C 16/0433 (2013.01); G11C 5/063 (2013.01); G11C 16/08 (2013.01); G11C 16/20 (2013.01);
Abstract

A nonvolatile memory device includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer includes word-lines, at least one string selection line, at least one ground selection line, and a memory cell array including at least one memory block. The second semiconductor includes a first address decoder and a second address decoder. The first address decoder is disposed under a first extension region adjacent to a first side of a cell region and includes a plurality of first pass transistors driving the word-lines, the at least one string selection line, and the at least one ground selection line. The second address decoder is disposed under a second extension region adjacent to a second side of the cell region and includes a plurality of second pass transistors driving the at least one string selection line and the at least one ground selection line.


Find Patent Forward Citations

Quick Actions:

Jeon, Hongsoo. (2024). Non-volatile memory device and method of operating nonvolatile memory device (U.S. Patent No. 11942154). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11942154

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…