Seoul, South Korea

Bongsoon Lim

This inventor holds 42 USPTO granted patents and 5 published patent applications, primarily in Nonvolatile Memory Devices. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2017-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Bongsoon Lim. Retrieved from https://idiyas.com/inventor/bongsoon-lim

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 42 

% Patents Active = 100.0

Average Co-Inventor Count = 3.7

ph-index = 3

Forward Citations = 32(Granted Patents)


Company Filing History:


Years Active: 2017-2025

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Areas of Expertise:
Nonvolatile Memory
Memory Devices
3D Structures
Address Re-Mapping
Memory Packages
Cell Over Periphery
Storage Devices
Operation Methods
Semiconductor Devices
Test Methods
I/O Signal Lines
Vertical Memory
42 patents (USPTO):Explore Patents

Title: Inventor Bongsoon Lim: Revolutionizing Technology in Seoul

Introduction: Bongsoon Lim is a pioneering inventor based in Seoul, South Korea, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Bongsoon Lim holds several patents in the areas of artificial intelligence, robotics, and renewable energy, showcasing his commitment to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Bongsoon Lim has worked with leading tech companies in Seoul, spearheading projects that have led to significant advancements in various industries.

Collaborations: Throughout his career, Bongsoon Lim has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge exchange.

Conclusion: Bongsoon Lim's relentless pursuit of innovation and his passion for creating cutting-edge technologies continue to inspire the next generation of inventors and shape the future of technology in Seoul and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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