Company Filing History:
Years Active: 2022-2025
Title: Innovations of SangMyeong Lee
Introduction
SangMyeong Lee is a notable inventor based in Gimhae-si, South Korea. He has made significant contributions to the field of memory devices, particularly in resistance random access memory technology. With a total of three patents to his name, Lee's work showcases his expertise and innovative spirit.
Latest Patents
One of his latest patents is titled "Resistance random access memory device and method for manufacturing same." This invention includes a resistance change layer made of an organometallic halide with perovskite grains, positioned on a first electrode, and a second electrode placed on the resistance change layer. The boundary between the perovskite grains features an amorphous metal oxide. Another significant patent is "Resistance access memory device and fabricating method of the same." This device consists of a first electrode, a resistance change layer formed on it, which includes a thin film containing BiXand and BiX, and a second electrode on the resistance change layer. The elements X and x in this patent are defined by specific chemical properties, showcasing the complexity and innovation in his designs.
Career Highlights
SangMyeong Lee is affiliated with Sungkyunkwan University, where he continues to advance research in memory technology. His academic background and ongoing research contribute to the development of cutting-edge memory devices.
Collaborations
Lee has collaborated with notable colleagues, including Won Bin Kim and Jae Myeong Lee. These partnerships enhance the research and development of innovative technologies in their field.
Conclusion
SangMyeong Lee's contributions to resistance random access memory technology highlight his role as a leading inventor in the field. His patents reflect a commitment to advancing memory device technology, making a significant impact on the industry.