The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 12, 2023

Filed:

Aug. 13, 2021
Applicant:

Research & Business Foundation Sungkyunkwan University, Suwon-si, KR;

Inventors:

Jung Hyun Suk, Seoul, KR;

Han Gil Sang, Suwon-si, KR;

SangMyeong Lee, Gimhae-si, KR;

Won Bin Kim, Suwon-si, KR;

Jae Myeong Lee, Gwanghyewon-myeon, KR;

Jun Young Kim, Suwon-si, KR;

Oh Young Gong, Suwon-si, KR;

Jin Hyuk Choi, Suwon-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); H10N 70/20 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/882 (2023.02); H10B 63/82 (2023.02); H10N 70/021 (2023.02); H10N 70/24 (2023.02); H10N 70/821 (2023.02); H10N 70/841 (2023.02); H10N 70/884 (2023.02); H10N 70/8822 (2023.02); H10N 70/8825 (2023.02); H10N 70/8828 (2023.02); H10N 70/026 (2023.02);
Abstract

A resistance access memory device includes a first electrode, a resistance change layer, formed on the first electrode, comprising a thin film containing BiXand and BiX, and a second electrode formed on the resistance change layer, where Xis a halogen element selected from the group consisting of F, Cl, Br, I, and combinations thereof, Xis a chalcogen element selected from the group consisting of S, Se, Te, and combinations thereof, and x is a real number of 0 or more and less than 3.


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