Seoul, South Korea

Jung Hyun Suk

This inventor holds 1 USPTO granted patent. Top assignee: Sungkyunkwan University. Active years: 2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jung Hyun Suk. Retrieved from https://idiyas.com/inventor/jung-hyun-suk

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 8.0

ph-index = 1


Company Filing History:


Years Active: 2023

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1 patent (USPTO):Explore Patents

Title: Innovations by Jung Hyun Suk

Introduction

Jung Hyun Suk is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of memory devices, particularly through his innovative patent.

Latest Patents

Jung Hyun Suk holds a patent for a resistance access memory device and the method of fabricating it. This device includes a first electrode, a resistance change layer formed on the first electrode, which comprises a thin film containing BiXand and BiX. The second electrode is formed on the resistance change layer, where X is a halogen element selected from the group consisting of F, Cl, Br, I, and combinations thereof. Additionally, X is a chalcogen element selected from the group consisting of S, Se, Te, and combinations thereof, with x being a real number of 0 or more and less than 3. This innovative approach enhances the performance and efficiency of memory devices.

Career Highlights

Jung Hyun Suk is affiliated with Sungkyunkwan University, where he continues to advance research in memory technology. His work has garnered attention for its potential applications in various electronic devices.

Collaborations

He collaborates with notable colleagues, including Han Gil Sang and SangMyeong Lee, contributing to a dynamic research environment that fosters innovation.

Conclusion

Jung Hyun Suk's contributions to the field of memory devices exemplify the impact of innovative thinking in technology. His patent reflects a significant advancement in memory technology, showcasing his expertise and dedication to research.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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