The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2025
Filed:
Nov. 16, 2021
Applicant:
Research & Business Foundation Sungkyunkwan University, Suwon-si, KR;
Inventors:
Hyun Suk Jung, Seoul, KR;
SangMyeong Lee, Gimhae-si, KR;
Won Bin Kim, Suwon-si, KR;
Jae Myeong Lee, Jincheon-gun, KR;
Oh Yeong Gong, Suwon-si, KR;
Jun Young Kim, Suwon-si, KR;
Jin Hyuk Choi, Suwon-si, KR;
ChangHwun Sohn, Busan, KR;
Assignee:
Research & Business Foundation Sungkyunkwan University, Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); H10B 63/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/8836 (2023.02); H10B 63/20 (2023.02); H10N 70/021 (2023.02); H10N 70/8833 (2023.02); H10N 70/841 (2023.02);
Abstract
A resistance random access memory device includes a resistance change layer, including an organometallic halide having perovskite grains, disposed on a first electrode; and a second electrode disposed on the resistance change layer. A boundary between the perovskite grains comprises an amorphous metal oxide.