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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11283019 B1

PDFFull Text
Date of Patent:
Mar. 22, 2022

Filed:

Dec. 05, 2019

Resistance random access memory device and fabricating method of the same

Applicant:

Research & Business Foundation Sungkyunkwan University, Suwon-si, KR;

Inventors:

Hyun Suk Jung, Seoul, KR;

SangMyeong Lee, Gimhae-si, KR;

Won Bin Kim, Suwon-si, KR;

Jae Myeong Lee, Jincheon-gun, KR;

Ohyeong Gong, Suwon-si, KR;

Assignee:

Research & Business Foundation Sungkyunkwan University, Suwon-si, KR;

Attorney:

NSIP Law

Primary Examiner:

Jerome Leboeuf

Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/148 (2013.01); G11C 13/0007 (2013.01); G11C 13/0069 (2013.01); H01L 27/2463 (2013.01); H01L 45/1253 (2013.01); H01L 45/1608 (2013.01);
Abstract

The present disclosure relates to a resistance random access memory device, including a first electrode, a resistance change layer formed on the first electrode, and a second electrode formed on the resistance change layer, and the resistance change layer includes a bismuth halide-based BiIBrthin film (where 0≤x≤3) and/or a CsAgBiBrIthin film (where 0≤x≤6) having an elpasolite structure.

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Jung, Hyun. (2022). Resistance random access memory device and fabricating method of the same (U.S. Patent No. 11283019). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11283019

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