The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2022
Filed:
Dec. 05, 2019
Applicant:
Research & Business Foundation Sungkyunkwan University, Suwon-si, KR;
Inventors:
Hyun Suk Jung, Seoul, KR;
SangMyeong Lee, Gimhae-si, KR;
Won Bin Kim, Suwon-si, KR;
Jae Myeong Lee, Jincheon-gun, KR;
Ohyeong Gong, Suwon-si, KR;
Assignee:
Research & Business Foundation Sungkyunkwan University, Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/148 (2013.01); G11C 13/0007 (2013.01); G11C 13/0069 (2013.01); H01L 27/2463 (2013.01); H01L 45/1253 (2013.01); H01L 45/1608 (2013.01);
Abstract
The present disclosure relates to a resistance random access memory device, including a first electrode, a resistance change layer formed on the first electrode, and a second electrode formed on the resistance change layer, and the resistance change layer includes a bismuth halide-based BiIBrthin film (where 0≤x≤3) and/or a CsAgBiBrIthin film (where 0≤x≤6) having an elpasolite structure.