Company Filing History:
Years Active: 2022
Title: Ohyeong Gong: Innovator in Resistance Random Access Memory Technology
Introduction
Ohyeong Gong is a prominent inventor based in Suwon-si, South Korea. He has made significant contributions to the field of memory technology, particularly in the development of resistance random access memory devices. His innovative work has garnered attention in both academic and industrial circles.
Latest Patents
Ohyeong Gong holds a patent for a resistance random access memory device and the method of fabricating the same. This patent describes a device that includes a first electrode, a resistance change layer formed on the first electrode, and a second electrode formed on the resistance change layer. The resistance change layer comprises a bismuth halide-based BiIBr thin film and/or a CsAgBiBrI thin film, both of which have an elpasolite structure. He has 1 patent to his name.
Career Highlights
Gong is affiliated with Sungkyunkwan University, where he continues to engage in research and development in the field of memory devices. His academic background and ongoing research contribute to advancements in technology that can impact various applications.
Collaborations
He has collaborated with notable colleagues, including Hyun Suk Jung and SangMyeong Lee, to further enhance the research and development of innovative memory technologies.
Conclusion
Ohyeong Gong's contributions to resistance random access memory technology highlight his role as an influential inventor in the field. His work not only advances academic knowledge but also has the potential to influence future technological developments.