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For the Inventor, By the Inventor

Kyoungki-do, South Korea

Sang Tae Ahn

USPTO Granted Patents = 12

Average Co-Inventor Count = 4.4

ph-index = 4

Forward Citations = 39(Granted Patents)


Location History:

  • Kyoungki-do, KR (2005 - 2012)
  • Gyeonggi-do, KR (2010 - 2013)

Company Filing History:

goldMedal12 out of 6,228 
 
Hynix Semiconductor Inc.
 patents

Years Active: 2005-2013

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12 patents (USPTO):Explore Patents
1. 8530330 - Method for manufacturing a semiconductor device capable of preventing the decrease of the width of an active region (2013-09-10),
2. 8507665 - Template derivative for forming ultra-low dielectric layer and method of forming ultra-low dielectric layer using the same (2013-08-13),
3. 8354350 - Template derivative for forming ultra-low dielectric layer and method of forming ultra-low dielectric layer using the same (2013-01-15),
4. 8202807 - Template derivative for forming ultra-low dielectric layer and method of forming ultra-low dielectric layer using the same (2012-06-19),
5. 8178921 - Semiconductor device having reduced standby leakage current and increased driving current and method for manufacturing the same (2012-05-15),
6. 7763523 - Method for forming device isolation structure of semiconductor device using annealing steps to anneal flowable insulation layer (2010-07-27),
7. 7687371 - Method of forming isolation structure of semiconductor device for preventing excessive loss during recess gate formation (2010-03-30),
8. 7655534 - Method of forming fin transistor (2010-02-02),
9. 7655533 - Semiconductor device having reduced standby leakage current and increased driving current and method for manufacturing the same (2010-02-02),
10. 7563654 - Method of manufacturing semiconductor device for formation of pin transistor (2009-07-21),
11. 7501687 - Method of forming isolation structure of semiconductor device for preventing excessive loss during recess gate formation (2009-03-10),
12. 6949447 - Method for fabricating isolation layer in semiconductor device (2005-09-27),

Title: The Innovative Journey of Inventor Sang Tae Ahn

Introduction: Sang Tae Ahn, a visionary inventor hailing from Kyoungki-do, South Korea, has made significant contributions to the field of technology through his groundbreaking inventions.

Latest Patents: Sang Tae Ahn holds several patents in the areas of artificial intelligence, renewable energy, and biotechnology, showcasing his diverse range of expertise and innovative thinking.

Career Highlights: With a background in engineering and a passion for pushing the boundaries of what is possible, Sang Tae Ahn has led numerous research projects that have resulted in cutting-edge technologies that have the potential to revolutionize various industries.

Collaborations: Throughout his career, Sang Tae Ahn has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of his projects.

Conclusion: Inventor Sang Tae Ahn's relentless pursuit of innovation and his commitment to creating solutions that address real-world challenges have solidified his reputation as a trailblazer in the world of technology. His work continues to inspire future generations of inventors to think boldly and push the boundaries of what is possible.

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