The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2009
Filed:
Dec. 29, 2006
Dong Sun Sheen, Kyoungki-do, KR;
Seok Pyo Song, Seoul, KR;
Sang Tae Ahn, Kyoungki-do, KR;
Hyeon Ju an, Kyoungki-do, KR;
Hyun Chul Sohn, Seoul, KR;
Dong Sun Sheen, Kyoungki-do, KR;
Seok Pyo Song, Seoul, KR;
Sang Tae Ahn, Kyoungki-do, KR;
Hyeon Ju An, Kyoungki-do, KR;
Hyun Chul Sohn, Seoul, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
A method for manufacturing a semiconductor device is disclosed. The method includes the steps of defining a trench into a field region of a semiconductor substrate having an active region and the field region; partially filing the trench with a flowable insulation layer; completely filling the trench with an isolation structure by depositing a close-packed insulation layer on the flowable insulation layer in the trench; etching through a portion of the close-packed insulation layer and etching into a partial thickness of the flowable insulation layer of the insulation structure to expose a portion of the active region; cleaning the resultant substrate having the active region relatively projected; forming spacers on etched portions of the flowable insulation layer where bowing occurs during the cleaning step; and forming gates on the active region and the insulation structure to border the exposed portion of the active region.