The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2013
Filed:
Apr. 10, 2008
Sang Tae Ahn, Gyeonggi-do, KR;
Ja Chun Ku, Gyeonggi-do, KR;
Eun Jeong Kim, Jeollanam-do, KR;
Wan Soo Kim, Chungcheongbuk-do, KR;
Sang Tae Ahn, Gyeonggi-do, KR;
Ja Chun Ku, Gyeonggi-do, KR;
Eun Jeong Kim, Jeollanam-do, KR;
Wan Soo Kim, Chungcheongbuk-do, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
A method for manufacturing a semiconductor device that can prevent the loss of an isolation structure and that can also stably form epi-silicon layers is described. The method for manufacturing a semiconductor device includes defining trenches in a semiconductor substrate having active regions and isolation regions. The trenches are partially filled with a first insulation layer. An etch protection layer is formed on the surfaces of the trenches that are filled with the first insulation layer. A second insulation layer is filled in the trenches formed with the etch protection layer to form an isolation structure in the isolation regions of the semiconductor substrate. Finally, portions of the active regions of the semiconductor substrate are recessed such that the isolation structure has a height higher than the active regions of the semiconductor substrate.