Company Filing History:

5 out of 5,491

Freescale Semiconductor,inc.

Years Active: 2002-2007

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8 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7282307 - Reflective mask useful for transferring a pattern using extreme ultra violet (EUV) radiation and method of making the same (2007-10-16),

2. 6986974 - Attenuated phase shift mask for extreme ultraviolet lithography and method therefore (2006-01-17),

3. 6986971 - Reflective mask useful for transferring a pattern using extreme ultraviolet (EUV) radiation and method of making the same (2006-01-17),

4. 6960509 - Method of fabricating three dimensional gate structure using oxygen diffusion (2005-11-01),

5. 6811936 - Structure and process for a pellicle membrane for 157 nanometer lithography (2004-11-02),

6. 6673520 - Method of making an integrated circuit using a reflective mask (2004-01-06),

7. 6653053 - Method of forming a pattern on a semiconductor wafer using an attenuated phase shifting reflective mask (2003-11-25),

8. 6477898 - Membrane mask stress measurement apparatus and method therefor (2002-11-12),

Title: The Innovative Contributions of Sang-In Han

Introduction

Sang-In Han is a prominent inventor based in Phoenix, AZ, known for his significant contributions to the field of semiconductor technology. With a total of eight patents to his name, he has made remarkable advancements in the design and manufacturing of reflective masks used in extreme ultraviolet (EUV) lithography.

Latest Patents

One of Sang-In Han's latest patents is focused on a reflective mask that is useful for transferring a pattern using extreme ultraviolet (EUV) radiation. This innovative EUV mask includes an opening that helps to attenuate and phase shift extreme ultraviolet radiation using a subtractive rather than additive method. The design incorporates a first embedded layer and a second embedded layer between a lower multilayer reflective stack and an upper multilayer reflective stack. This configuration ensures an appropriate and accurate depth of the opening while allowing for defect inspection and optional defect repair of the EUV mask. Additionally, an optional anti-reflective coating (ARC) layer may be deposited in specific regions to reduce reflection within dark areas. Optimal thicknesses and locations of the various layers are meticulously described in the patent documentation.

Career Highlights

Sang-In Han has had a distinguished career, having worked with notable companies such as Freescale Semiconductor, Inc. and Motorola Corporation. His experience in these leading technology firms has contributed to his expertise in semiconductor innovations and patent development.

Collaborations

Throughout his career, Sang-In Han has collaborated with talented individuals, including Scott Daniel Hector and Pawitter Jit Mangat. These collaborations have further enriched his work and contributed to the advancement of technology in the semiconductor industry.

Conclusion

Sang-In Han's innovative work in the field of semiconductor technology, particularly in the development of EUV masks, showcases his significant contributions to the industry. His patents reflect a deep understanding of the complexities involved in modern lithography techniques.

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