The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2004
Filed:
Dec. 31, 2002
Steven Smith, Gilbert, AZ (US);
Sang-In Han, Phoenix, AZ (US);
Freescale Semiconductor Inc., Austin, TX (US);
Abstract
A pellicle membrane structure ( ) is made by a process that includes depositing ( ) a etch mask layer ( ) on the backside of the semiconductor wafer, deposting ( ) a first pellicle membrane protection layer ( ) on a frontside of the semiconductor wafer, depositing ( ) a layer of membrane material ( ) that is preferably SiOF on the first membrane protection layer, and depositing ( ) a second pellicle membrane protection layer ( ) on the membrane material layer, forming a pattern ( ) for an opening ( ) in the semiconductor, and etching ( ) to form the opening. Oxygen plasma ( ) is then used to remove carbon from the exposed portions of the pellicle membrane protection layers, which are preferably SiCN, which in the preferable embodiment changes the exposed surfaces to SiOF, thereby forming a thin SiOF membrane ( ) over the opening.