The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2006
Filed:
Nov. 08, 2002
Sang-in Han, Phoenix, AZ (US);
Scott Daniel Hector, Austin, TX (US);
Pawitter J. S. Mangat, Gilbert, AZ (US);
Sang-In Han, Phoenix, AZ (US);
Scott Daniel Hector, Austin, TX (US);
Pawitter J. S. Mangat, Gilbert, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
An EUV mask () includes an opening () that helps to attenuate and phase shift extreme ultraviolet radiation using a subtractive rather than additive method. An etch stop layer () may be provided between a lower multilayer reflective stack () and an upper multilayer reflective stack () to ensure an appropriate and accurate depth of the opening. An absorber layer () may be deposited within the opening to sufficiently reduce the amount of reflection within dark region (). Optimal thicknesses and locations of the various layers are described.