Ichon-shi, South Korea

Sang-Hyun Oh


Average Co-Inventor Count = 2.7

ph-index = 4

Forward Citations = 60(Granted Patents)


Location History:

  • Ichon-shi, KR (2004 - 2006)
  • Gyeonggi-do, KR (2013 - 2016)

Company Filing History:


Years Active: 2004-2016

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11 patents (USPTO):Explore Patents

Title: The Innovations of Sang-Hyun Oh

Introduction

Sang-Hyun Oh is a prominent inventor based in Ichon-shi, South Korea. He has made significant contributions to the field of non-volatile memory devices, holding a total of 11 patents. His work focuses on enhancing the efficiency and functionality of memory technology.

Latest Patents

One of his latest patents is a non-volatile memory device and method for fabricating the same. This invention features a three-dimensional non-volatile memory device designed to increase erase operation efficiency during an erase operation using Gate-Induced Drain Leakage (GIDL) current. The device includes a channel structure formed over a substrate with multiple inter-layer dielectric layers and channel layers that are alternately stacked. It also incorporates a first selection gate and a second selection gate positioned on either side of the channel structure, with differing work functions for the materials used in each gate.

Another notable patent is for a non-volatile memory device featuring a three-dimensional, vertical channel with an alternately stacked gate electrode structure. The fabrication method involves alternately stacking inter-layer dielectric layers and sacrificial layers over a substrate, etching these layers to form trenches, and creating junction layers to form a channel within the trenches.

Career Highlights

Sang-Hyun Oh has worked with notable companies in the semiconductor industry, including Hynix Semiconductor Inc. and SK Hynix Inc. His experience in these organizations has contributed to his expertise in memory technology and innovation.

Collaborations

He has collaborated with several professionals in his field, including Kye-Nam Lee and Jin-Yong Seong. These collaborations have likely enhanced his research and development efforts in non-volatile memory devices.

Conclusion

Sang-Hyun Oh's contributions to the field of non-volatile memory technology are significant, with multiple patents that showcase his innovative approach. His work continues to influence advancements in memory devices, making him a key figure in the industry.

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