IDiyas

For the Inventor, By the Inventor

Ichon-shi, South Korea

Sang-Hyun Oh

USPTO Granted Patents = 11

Average Co-Inventor Count = 2.7

ph-index = 4

Forward Citations = 60(Granted Patents)


Location History:

  • Ichon-shi, KR (2004 - 2006)
  • Gyeonggi-do, KR (2013 - 2016)

Company Filing History:

goldMedal9 out of 6,228 
 
Hynix Semiconductor Inc.
 patents
silverMedal2 out of 10,938 
 
Skhynix Inc.
 patents

Years Active: 2004-2016

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11 patents (USPTO):
1. 9401370 - Non-volatile memory device and method for fabricating the same (2016-07-26),
2. 8829598 - Non-volatile memory device having three dimensional, vertical channel, alternately stacked gate electrode structure (2014-09-09),
3. 8648409 - Non-volatile memory device and method for fabricating the same (2014-02-11),
4. 8575675 - Nonvolatile memory device (2013-11-05),
5. 8461003 - Method for fabricating 3D-nonvolatile memory device (2013-06-11),
6. 7015531 - FeRAM having bottom electrode connected to storage node and method for forming the same (2006-03-21),
7. 6930910 - Magnetic random access memory cell device using magnetic tunnel junction (2005-08-16),
8. 6927437 - Ferroelectric memory device (2005-08-09),
9. 6927121 - Method for manufacturing ferroelectric random access memory capacitor (2005-08-09),
10. 6919212 - Method for fabricating ferroelectric random access memory device with merged-top electrode-plateline capacitor (2005-07-19),
11. 6773929 - Ferroelectric memory device and method for manufacturing the same (2004-08-10),
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