The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2014
Filed:
Sep. 21, 2011
Han-soo Joo, Gyeonggi-do, KR;
Dong-kee Lee, Gyeonggi-do, KR;
Sang-hyun OH, Gyeonggi-do, KR;
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Abstract
A method for fabricating a non-volatile memory device includes forming a channel link layer and an isolation layer surrounding the channel link layer over a substrate, forming a stack structure having interlayer dielectric layers that are alternately stacked with gate electrode layers over the channel link layer and the isolation layer, and forming a pair of channels connected to the channel link layer through the stack structure, and a memory layer interposed between the channel and the stack structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile