The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2005
Filed:
Dec. 03, 2002
Applicants:
Sang-hyun OH, Ichon-shi, KR;
Kye-nam Lee, Ichon-shi, KR;
Inventors:
Sang-Hyun Oh, Ichon-shi, KR;
Kye-Nam Lee, Ichon-shi, KR;
Assignee:
Hynix Semiconductor Inc., Ichon-shi, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C011/14 ;
U.S. Cl.
CPC ...
Abstract
The present invention provides a magnetic random access memory (MRAM) cell device with a magnetic tunnel junction capable of obtaining a sufficient sense margins. To achieve this effect, the present invention provides a magnetic random access memory (MRAM) cell device, including: a word line; a bit line; a switching unit connected to the word line and the bit line; a magnetic tunnel junction unit connected to the bit line and the switching unit in parallel.