The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2016
Filed:
Sep. 07, 2012
Sang-moo Choi, Gyeonggi-do, KR;
Byung-soo Park, Gyeonggi-do, KR;
Sang-hyun OH, Gyeonggi-do, KR;
Han-soo Joo, Gyeonggi-do, KR;
Sang-Moo Choi, Gyeonggi-do, KR;
Byung-Soo Park, Gyeonggi-do, KR;
Sang-Hyun Oh, Gyeonggi-do, KR;
Han-Soo Joo, Gyeonggi-do, KR;
SK Hynix Inc., Gyeonggi-do, KR;
Abstract
A three-dimensional non-volatile memory device that may increase erase operation efficiency during an erase operation using Gate-Induced Drain Leakage (GIDL) current and a method for fabricating the three-dimensional non-volatile memory device. The non-volatile memory device includes a channel structure formed over a substrate including a plurality of inter-layer dielectric layers and a plurality of channel layers that are alternately stacked, and a first selection gate and a second selection gate that are disposed on a first side and a second side of the channel structure, wherein the first selection gate and the second selection gate are disposed on sidewalls of the multiple channel layers, respectively, wherein a work function of a material forming the first selection gate is different from a work function of a material forming the second selection gate.