Sang Hwan Park

Title: Exploring the Innovations of Sang Hwan Park

Introduction

Sang Hwan Park, an esteemed inventor residing in Hwaseong-si, South Korea, has made remarkable contributions to the field of memory devices. With a portfolio of 23 patents, his innovative spirit continues to drive advancements in technology, particularly at Samsung Electronics Co., Ltd.

Latest Patents

Among his latest inventions is a patented magnetic memory device and method for fabricating the same. This device features a pinned layer, a free layer, and a tunnel barrier layer located between them. It also includes two oxide layers, with specific thickness ranges for optimal performance. The first oxide layer is made from a first material and has a thickness between 0.3 Å to 2.0 Å, while the second oxide layer is created from a second material with thickness ranging from 0.1 Å to 5.0 Å. Notably, the first material exhibits a greater oxygen affinity than the second, enhancing the device's functionality.

Additionally, Park has developed a variable resistance memory device comprising a substrate and horizontally spaced structures with variable resistance patterns. Each horizontal structure integrates a first electrode pattern, a semiconductor pattern, and a second electrode pattern, providing a robust configuration for improved memory performance.

Career Highlights

Sang Hwan Park has established himself as a leading inventor at Samsung Electronics Co., Ltd. His extensive work in memory technology has gained recognition and has led to numerous accolades within the field. His innovative approaches have significantly influenced the design and functionality of memory devices.

Collaborations

Throughout his career, Park has collaborated with notable colleagues, including Whankyun Kim and Ki Woong Kim. These partnerships have fostered a dynamic environment that encourages groundbreaking inventions and collective advancements in technology.

Conclusion

Sang Hwan Park's contributions to the field of technology through his numerous patents signify his role as a pioneering inventor at Samsung Electronics Co., Ltd. His latest innovations in magnetic and variable resistance memory devices continue to push the boundaries of what is possible in memory technology, affirming his status as an influential figure in the industry.