Samsung Electronics Co., Ltd.

Other

Sang Hwan Park

Whankyun Kim

Ki Woong Kim

Sechung Oh

Woo Chang Lim

Keewon Kim

Joonmyoung Lee

Se Chung Oh

Kwangseok Kim

Jang Eun Lee

Jeong Heon Park

Jae Hoon Kim

Younghyun Kim

Youngman Jang

Young Hyun Kim

Sangyong Kim

Sung Chul Lee

Hyun Min Cho

Yong-Sung Park

Woojin Kim

Young Dug Kim

Soonoh Park

Woo Jin Kim

Hee Ju Shin

Hyeon Woo Seo

Jeongheon Park

Hyeonwoo Seo

A magnetic memory device includes a pinned layer, a free layer, a tunnel barrier layer between the pinned layer and the free layer, a first oxide layer spaced apart from the tunnel barrier layer with the free layer therebetween, and a second oxide layer spaced apart from the free layer with the first oxide layer therebetween. The first oxide layer includes an oxide of a first material and may have a thickness of 0.3 &#x212b; to 2.0 &#x212b;. The second oxide layer may include an oxide of a second material and may have a thickness of 0.1 &#x212b; to 5.0 &#x212b;. A first oxygen affinity of the first material may be greater than a second oxygen affinity of the second material.

Magnetic memory device and method for fabricating the same

A variable resistance memory device including a substrate; horizontal structures spaced apart from each other in a first direction perpendicular to a top surface of the substrate; variable resistance patterns on the horizontal structures, respectively; and conductive lines on the variable resistance patterns, respectively, wherein each of the horizontal structures includes a first electrode pattern, a semiconductor pattern, and a second electrode pattern arranged along a second direction parallel to the top surface of the substrate, and each of the variable resistance patterns is between one of the second electrode patterns and a corresponding one of the conductive lines.

Variable resistance memory device

A magnetic memory device includes a reference magnetic structure, a free magnetic structure, and a tunnel barrier pattern therebetween. The reference magnetic structure includes a first pinned pattern, a second pinned pattern between the first pinned pattern and the tunnel barrier pattern, and an exchange coupling pattern between the first pinned pattern and the second pinned pattern. The second pinned pattern includes magnetic patterns and non-magnetic patterns, which are alternately stacked. The first pinned pattern is a ferromagnetic pattern consisted of a ferromagnetic element.

Magnetic memory device having a ferromagnetic element

A semiconductor memory device includes free magnetic pattern on a substrate, a reference magnetic pattern on the free magnetic pattern, the reference magnetic pattern including a first pinned pattern, a second pinned pattern, and an exchange coupling pattern between the first and second pinned patterns, a tunnel barrier pattern between the reference magnetic pattern and the free magnetic pattern, a polarization enhancement magnetic pattern between the tunnel barrier pattern and the first pinned pattern, and an intervening pattern between the polarization enhancement magnetic pattern and the first pinned pattern, wherein the first pinned pattern includes first ferromagnetic patterns and anti-ferromagnetic exchange coupling patterns which are alternately stacked.

Semiconductor memory device

A magnetic memory device includes a reference magnetic structure, a free magnetic structure, and a tunnel barrier pattern between the reference magnetic structure and the free magnetic structure. The reference magnetic structure includes a first pinned pattern, a second pinned pattern between the first pinned pattern and the tunnel barrier pattern, and an exchange coupling pattern between the first and the second pinned pattern. The second pinned pattern includes a first magnetic pattern adjacent the exchange coupling pattern, a second magnetic pattern adjacent the tunnel barrier pattern, a third magnetic pattern between the first and the second magnetic pattern, a first non-magnetic pattern between the first and the third magnetic pattern, and a second non-magnetic pattern between the second and the third magnetic pattern. The first non-magnetic pattern has a different crystal structure from the second non-magnetic pattern, and at least a portion of the third magnetic pattern is amorphous.

Magnetic memory device

A magnetic memory device may include a free magnetic pattern and a capping pattern on a surface of the free magnetic pattern. The capping pattern may include first and second metal elements. The capping pattern may include a first portion adjacent to an interface between the free magnetic pattern and the capping pattern, and a second portion spaced apart from the interface. The first metal element may have a concentration greater in the first portion than in the second portion. The first metal element may have an atomic weight smaller than that of the second metal element. The concentration of the first metal element along the thickness direction of the capping pattern may be proportional to a proximity to the interface.

Magnetic memory devices and methods for manufacturing the same

A memory device includes a magnetic tunnel junction comprising a first free layer, a pinned layer, and a tunnel barrier layer disposed between the first free layer and the pinned layer, wherein the first free layer comprises a first free magnetic pattern adjacent to the tunnel barrier layer, and a second free magnetic pattern spaced apart from the tunnel barrier layer with the first free magnetic pattern interposed therebetween, wherein the second free magnetic pattern contacts the first free magnetic pattern, wherein the first and second free magnetic patterns include boron (B), wherein a boron content of the first free magnetic pattern is higher than a boron content of the second free magnetic pattern, and wherein the boron content of the first free magnetic pattern is in a range of about 25 at % to about 50 at %.

Magnetic memory device and method for manufacturing the same

A magnetic memory device includes a reference magnetic pattern having a magnetization direction fixed in one direction, a free magnetic pattern having a changeable magnetization direction, and a tunnel barrier pattern disposed between the free and reference magnetic patterns. The free magnetic pattern has a first surface being in contact with the tunnel barrier pattern and a second surface opposite to the first surface. The magnetic memory device further includes a sub-oxide pattern disposed on the second surface of the free magnetic pattern, and a metal boride pattern disposed between the sub-oxide pattern and the second surface of the free magnetic pattern. The magnetization directions of the free and reference magnetic patterns are substantially perpendicular to the first surface of the free magnetic pattern.

Magnetic memory device and method of manufacturing the same

Provided is a magnetic tunneling junction device including a first structure including a magnetic layer; a second structure including at least two extrinsic perpendicular magnetization structures, each including a magnetic layer and; a perpendicular magnetization inducing layer on the magnetic layer; and a tunnel barrier between the first and second structures.

Magnetic tunneling junction devices, memories, memory systems, and electronic devices

Provided are magnetic memory devices with a perpendicular magnetic tunnel junction. The device includes a magnetic tunnel junction including a free layer structure, a pinned layer structure, and a tunnel barrier therebetween. The pinned layer structure may include a first magnetic layer having an intrinsic perpendicular magnetization property, a second magnetic layer having an intrinsic in-plane magnetization property, and an exchange coupling layer interposed between the first and second magnetic layers. The exchange coupling layer may have a thickness maximizing an antiferromagnetic exchange coupling between the first and second magnetic layers, and the second magnetic layer may exhibit a perpendicular magnetization direction, due at least in part to the antiferromagnetic exchange coupling with the first magnetic layer.

Growing community of inventors

Hwaseong-si, South Korea

Sang Hwan Park