The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2018
Filed:
Jun. 08, 2017
Sung Chul Lee, Osan-si, KR;
Ki Woong Kim, Hwaseong-si, KR;
Sang Hwan Park, Hwaseong-si, KR;
Sechung OH, Yongin-si, KR;
Sung Chul Lee, Osan-si, KR;
Ki Woong Kim, Hwaseong-si, KR;
Sang Hwan Park, Hwaseong-si, KR;
Sechung Oh, Yongin-si, KR;
Abstract
A magnetic memory device includes a reference magnetic structure, a free magnetic structure, and a tunnel barrier pattern between the reference magnetic structure and the free magnetic structure. The reference magnetic structure includes a first pinned pattern, a second pinned pattern between the first pinned pattern and the tunnel barrier pattern, and an exchange coupling pattern between the first and the second pinned pattern. The second pinned pattern includes a first magnetic pattern adjacent the exchange coupling pattern, a second magnetic pattern adjacent the tunnel barrier pattern, a third magnetic pattern between the first and the second magnetic pattern, a first non-magnetic pattern between the first and the third magnetic pattern, and a second non-magnetic pattern between the second and the third magnetic pattern. The first non-magnetic pattern has a different crystal structure from the second non-magnetic pattern, and at least a portion of the third magnetic pattern is amorphous.