The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 19, 2018

Filed:

Mar. 09, 2017
Applicants:

Sang Hwan Park, Hwaseong-si, KR;

Keewon Kim, Suwon-si, KR;

Youngman Jang, Hwaseong-si, KR;

Kwangseok Kim, Seoul, KR;

Inventors:

Sang Hwan Park, Hwaseong-si, KR;

Keewon Kim, Suwon-si, KR;

Youngman Jang, Hwaseong-si, KR;

Kwangseok Kim, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract

A magnetic memory device may include a free magnetic pattern and a capping pattern on a surface of the free magnetic pattern. The capping pattern may include first and second metal elements. The capping pattern may include a first portion adjacent to an interface between the free magnetic pattern and the capping pattern, and a second portion spaced apart from the interface. The first metal element may have a concentration greater in the first portion than in the second portion. The first metal element may have an atomic weight smaller than that of the second metal element. The concentration of the first metal element along the thickness direction of the capping pattern may be proportional to a proximity to the interface.


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