IDiyas

For the Inventor, By the Inventor

Hwaseong-si, South Korea

Youngman Jang

USPTO Granted Patents = 8 

Average Co-Inventor Count = 4.2

ph-index = 4

Forward Citations = 23(Granted Patents)


Company Filing History:

goldMedal8 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2017-2019

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8 patents (USPTO):
1. 10483456 - Semiconductor memory device (2019-11-19),
2. 10153422 - Semiconductor memory device (2018-12-11),
3. 10147873 - Free layer, magnetoresistive cell, and magnetoresistive random access memory device having low boron concentration region and high boron concentration region, and methods of fabricating the same (2018-12-04),
4. 10003011 - Magnetic memory devices and methods for manufacturing the same (2018-06-19),
5. 9905753 - Free layer, magnetoresistive cell, and magnetoresistive random access memory device having low boron concentration region and high boron concentration region, and methods of fabricating the same (2018-02-27),
6. 9825216 - Semiconductor memory device (2017-11-21),
7. 9761795 - Method and processing apparatus for fabricating a magnetic resistive random access memory device (2017-09-12),
8. 9570673 - Method and processing apparatus for fabricating a magnetic resistive random access memory device (2017-02-14),

Title: **Innovator Spotlight: Youngman Jang**

Introduction

Youngman Jang is a prominent inventor based in Hwaseong-si, South Korea. With a remarkable portfolio of 8 patents, he significantly contributes to advancements in semiconductor technology. His inventive prowess has made him a key figure in the tech industry.

Latest Patents

Youngman Jang's latest patents revolve around semiconductor memory devices. One notable invention describes a semiconductor memory device that includes a free magnetic pattern situated on a substrate, alongside a reference magnetic pattern mounted on the free magnetic pattern. This reference pattern consists of a first pinned pattern, a second pinned pattern, and an exchange coupling pattern bridging the two. Moreover, it features a tunnel barrier pattern and a polarization enhancement magnetic pattern strategically placed between the tunnel barrier and the first pinned pattern. The first pinned pattern comprises alternately stacked ferromagnetic patterns and anti-ferromagnetic exchange coupling patterns, showcasing his innovative approach to enhancing memory device efficiency.

Career Highlights

Youngman Jang is currently employed at Samsung Electronics Co., Ltd., a leading company in the field of technology and electronics. His expertise in semiconductor memory devices has positioned him as a vital asset within the organization. His contributions aid the company in maintaining its reputation for innovation and excellence.

Collaborations

Throughout his career, Youngman Jang has worked closely with talented colleagues, including Sang Hwan Park and Keewon Kim. Collaborating with such professionals has enabled him to exchange ideas and further enhance the impact of his inventions in the semiconductor field.

Conclusion

In conclusion, Youngman Jang stands out as a dedicated inventor whose innovative work in semiconductor memory technology has garnered numerous patents. His contributions at Samsung Electronics Co., Ltd. and collaborations with esteemed colleagues underscore his commitment to driving advancements in the tech industry. As he continues to develop groundbreaking solutions, Youngman Jang remains an influential figure in the world of inventions.

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