Sang Cheol Han

Title: Innovations of Sang Cheol Han

Introduction

Sang Cheol Han is a notable inventor based in Albany, NY (US). He has made significant contributions to the field of memory technology, holding a total of four patents. His work focuses on advanced methodologies for fabricating memory structures that enhance performance and efficiency.

Latest Patents

One of his latest patents involves technologies for fabricating a vertical DRAM structure. This innovation includes forming a DRAM cell hole through a word line layer and an associated substrate, ensuring vertical alignment between the pillar capacitor structure and the transistor channel. Another significant patent pertains to the fabrication of a three-dimensional (3D) memory structure. This structure features a memory array on one side of a substrate, with methodologies disclosed for its effective fabrication.

Career Highlights

Sang Cheol Han is currently employed at Tokyo Electron Limited, where he continues to push the boundaries of memory technology. His expertise in the field has led to groundbreaking advancements that are crucial for modern computing.

Collaborations

He has collaborated with notable coworkers, including Soo Doo Chae and Sunghil Lee, contributing to the innovative projects at Tokyo Electron Limited.

Conclusion

Sang Cheol Han's work exemplifies the spirit of innovation in memory technology. His patents reflect a commitment to advancing the capabilities of memory structures, making a lasting impact in the industry.