Yokohama, Japan

Sanae Ito

USPTO Granted Patents = 8 

Average Co-Inventor Count = 2.5

ph-index = 4

Forward Citations = 71(Granted Patents)


Location History:

  • Kanagawa-ken, JP (2007)
  • Kanagawa, JP (2008)
  • Yokohama, JP (2008 - 2013)

Company Filing History:


Years Active: 2007-2013

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8 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Sanae Ito

Introduction

Sanae Ito is a prominent inventor based in Yokohama, Japan. She has made significant contributions to the field of semiconductor manufacturing and simulation processes. With a total of 8 patents to her name, her work has had a substantial impact on technology and engineering.

Latest Patents

Sanae Ito's latest patents include a method and a non-transitory computer-readable recording medium for simulating a manufacturing process of a structure. This method involves several steps, such as importing mesh and material data, specifying regions for impurity diffusion, and solving diffusion equations. Another notable patent is related to a semiconductor manufacturing method and semiconductor device. This method outlines the process of forming a mask layer, etching a semiconductor substrate, and creating gate insulating films, among other steps.

Career Highlights

Sanae Ito is currently employed at Kabushiki Kaisha Toshiba, where she continues to innovate and develop new technologies. Her expertise in semiconductor devices and manufacturing processes has positioned her as a key figure in her field.

Collaborations

Sanae has collaborated with notable coworkers, including Takashi Izumida and Takahisa Kanemura. Their combined efforts have contributed to advancements in semiconductor technology.

Conclusion

Sanae Ito's work exemplifies the spirit of innovation in the semiconductor industry. Her patents and contributions continue to influence the field, showcasing her dedication to advancing technology.

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