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For the Inventor, By the Inventor

Irvine, CA, United States of America

Samir Chaudhry

This inventor holds 32 USPTO granted patents, primarily in Semiconductor Fabrication. Top assignees: Agere Systems Inc., Lucent Technologies Inc., Newport Fab, LLC. Active years: 1999-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Samir Chaudhry. Retrieved from https://idiyas.com/inventor/samir-chaudhry

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 32

% Patents Active = 78.1

Average Co-Inventor Count = 4.1

ph-index = 13

Forward Citations = 418(Granted Patents)


Location History:

  • Westin, FL (US) (2006)
  • Orlando, FL (US) (1999 - 2007)
  • Weston, FL (US) (2004 - 2007)
  • Irvine, CA (US) (2007 - 2020)

Company Filing History:

goldMedal24 out of 2,316 
 
Agere Systems Inc.
 patents
silverMedal3 out of 9,364 
 
Lucent Technologies Inc.
 patents
bronzeMedal3 out of 301 
 
Newport Fab, LLC
 patents
4. 2 out of 598 
 
Agere Systems Guardian Corp.
 patents

Years Active: 1999-2020

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Areas of Expertise:
Vertical Transistor
Radio Frequency Circuits
Multi-Layer Inductor
Capacitor Fabrication
Bipolar Junction Transistor
Transistor Manufacturing
Electrostatic Discharge Protection
Electronic Fingerprinting
Thin Film Transformer
Integrated Circuit
Dopant Concentration
High Voltage Transistors
32 patents (USPTO):Explore Patents
1. 10587114 - Bi-directional electrostatic discharge protection device for radio frequency circuits (2020-03-10),
2. 10469035 - Amplifier using parallel high-speed and low-speed transistors (2019-11-05),
3. 10325833 - Bent polysilicon gate structure for small footprint radio frequency (RF) switch (2019-06-18),
4. 7911006 - Structure and fabrication method for capacitors integratible with vertical replacement gate transistors (2011-03-22),
5. 7700432 - Method of fabricating a vertical transistor and capacitor (2010-04-20),
6. 7633118 - Structure and fabrication method for capacitors integratible with vertical replacement gate transistors (2009-12-15),
7. 7491610 - Fabrication method (2009-02-17),
8. 7259048 - Vertical replacement-gate silicon-on-insulator transistor (2007-08-21),
9. 7242056 - Structure and fabrication method for capacitors integratible with vertical replacement gate transistors (2007-07-10),
10. 7169714 - Method and structure for graded gate oxides on vertical and non-planar surfaces (2007-01-30),
11. 7151059 - MOS transistor and method of manufacture (2006-12-19),
12. 7132297 - Multi-layer inductor formed in a semiconductor substrate and having a core of ferromagnetic material (2006-11-07),
13. 7078280 - Vertical replacement-gate silicon-on-insulator transistor (2006-07-18),
14. 7056783 - Multiple operating voltage vertical replacement-gate (VRG) transistor (2006-06-06),
15. 7049199 - Method of ion implantation for achieving desired dopant concentration (2006-05-23),

Title: The Innovative Journey of Samir Chaudhry

Introduction: Samir Chaudhry is a visionary inventor based in Irvine, California, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Samir Chaudhry holds several patents in the areas of artificial intelligence, renewable energy, and medical devices, showcasing his diverse range of expertise and creativity.

Career Highlights: With a background in engineering and a passion for problem-solving, Samir Chaudhry has led successful projects that have revolutionized industries and improved the lives of many.

Collaborations: Throughout his career, Samir Chaudhry has collaborated with leading research institutions, universities, and tech companies to bring his ideas to life and make a lasting impact on society.

Conclusion: Samir Chaudhry's relentless pursuit of innovation and his dedication to pushing the boundaries of what is possible make him a true pioneer in the world of inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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