Bent polysilicon gate structure for small footprint radio frequency (rf) switch

Abstract

A semiconductor structure includes a plurality of source/drain regions, a plurality of channel/body regions located between the source/drain regions, and a polysilicon gate structure located over the plurality of channel/body regions. The polysilicon gate structure includes a plurality of polysilicon gate fingers, each extending over a corresponding one of the channel/body regions. Each polysilicon gate finger includes first and second rectangular portions that extend in parallel with a first axis, and a connector portion that introduces an offset between the first and second rectangular portions along the first axis. This offset results in each source/drain region having a first section with a first length, and a second section with a second length, greater than the first length. A single column of contacts are provided in the first section of each source/drain region, and multiple columns of contacts are provided in the second section of each source/drain region.