Gifu, Japan

Sadao Yoshikawa

This inventor holds 18 USPTO granted patents, primarily in Semiconductor Memory. Top assignees: Sanyo Electric Co., Ltd., Sanyo Semiconductor Co., Ltd., Semiconductor Components Industries, LLC. Active years: 1998-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sadao Yoshikawa. Retrieved from https://idiyas.com/inventor/sadao-yoshikawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 77.8

Average Co-Inventor Count = 1.9

ph-index = 6

Forward Citations = 139(Granted Patents)


Location History:

  • Gifu-ken, JP (1998 - 2002)
  • Yohroh-gun, JP (2010)
  • Yoro-gun, JP (1999 - 2012)
  • Gifu, JP (2007 - 2013)
  • Yoro-cho, JP (2014)

Company Filing History:


Years Active: 1998-2014

Loading Chart...
Areas of Expertise:
Memory Device
Semiconductor Memory
Charge Pump Circuit
Reset Circuit
Sense Amplifier
Non-Volatile Memory
Parallel Interface
Data Characteristics
Testing Method
Multistate Device
Address Transition Detector
Static Memory
18 patents (USPTO):Explore Patents

Title: Sadao Yoshikawa: A Pioneer in Memory Device Innovations

Introduction

Sadao Yoshikawa, an esteemed inventor from Gifu, Japan, has made significant contributions to the field of memory devices, holding a remarkable 18 patents. His innovative work primarily revolves around enhancing data read-out rates and improving the reliability of EEPROM circuits, demonstrating his expertise in the realm of semiconductor technology.

Latest Patents

Among his latest patents, one notable invention is a memory device designed to increase the data read-out rate while minimizing circuit size. This invention utilizes a serial interface that employs a memory cell array, along with row and column address decoders, to effectively synchronize address signals with a clock input. Furthermore, Yoshikawa's developments include sophisticated sense amplifiers tailored for each bit of data, enhancing data retrieval accuracy.

Another significant patent addresses a reset circuit for high voltage operations. This innovation safeguards the reset transistor from deterioration during power-down scenarios that occur during programming or erasing operations. By implementing a system that relies on both a power-on reset signal and a low-voltage detection signal, Yoshikawa has successfully ensured the stability of high voltage circuits, preserving the integrity of critical transistors during operations.

Career Highlights

Throughout his career, Sadao Yoshikawa has worked with prominent companies such as Sanyo Electric Co., Ltd. and Sanyo Semiconductor Co., Ltd. His tenure at these organizations has been marked by a commitment to advancing technology and innovation in the semiconductor industry.

Collaborations

Yoshikawa has collaborated with notable coworkers including Toshiki Rai and Yasuhiro Kobayashi. Their collective efforts have contributed to the successful development of groundbreaking technologies within the field, enhancing the capabilities and performance of memory devices.

Conclusion

Sadao Yoshikawa stands as a pivotal figure in the realm of memory device innovation. With his impressive portfolio of patents and significant contributions to the semiconductor industry, he continues to influence the landscape of technology. His work not only exemplifies technical proficiency but also a dedication to advancing the capabilities of electronic components for future generations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…