Tokyo, Japan

Sadao Nakashima

This inventor holds 4 USPTO granted patents. Top assignees: Nippon Telegraph and Telephone Corporation, Komatsu Electronic Metals Co., Ltd., Ntt Electronics Technology Corporation. Active years: 1997-1999.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sadao Nakashima. Retrieved from https://idiyas.com/inventor/sadao-nakashima-a8kaftwx

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.6

ph-index = 4

Forward Citations = 65(Granted Patents)


Location History:

  • Tokyo, JP (1997)
  • Kanagawa, JP (1999)
  • Chiyoda-ku, JP (1999)

Company Filing History:


Years Active: 1997-1999

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4 patents (USPTO):Explore Patents

Title: Sadao Nakashima: Innovator in SOI Substrate Technology

Introduction

Sadao Nakashima is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the manufacturing of Silicon-On-Insulator (SOI) substrates. With a total of 4 patents to his name, Nakashima's work has had a lasting impact on the industry.

Latest Patents

One of Nakashima's latest patents is a method of manufacturing an SOI substrate. This method utilizes an SOI substrate that consists of a first single-crystal silicon layer, an insulating layer, and a second single-crystal silicon layer. The surface of the second single-crystal silicon layer undergoes thermal oxidation, and its thickness is controlled by removing the oxidized surface. This process includes annealing to eliminate stacking faults caused by thermal oxidation.

Another notable patent is related to the production of an SOI substrate with a single-crystal silicon layer on a buried oxide layer. This method involves implanting oxygen ions into a single-crystal silicon substrate and performing anneal processing in an inert gas atmosphere at high temperatures. This process forms the buried oxide layer, which is crucial for the substrate's electrical insulation.

Career Highlights

Throughout his career, Sadao Nakashima has worked with esteemed companies such as Nippon Telegraph and Telephone Corporation and Komatsu Electronic Metals Co., Ltd. His experience in these organizations has allowed him to refine his expertise in semiconductor technology and contribute to innovative solutions in the field.

Collaborations

Nakashima has collaborated with notable colleagues, including Tatsuhiko Katayama and Katsutoshi Izumi. These partnerships have fostered a collaborative environment that has led to advancements in SOI substrate technology.

Conclusion

Sadao Nakashima's contributions to the field of semiconductor technology, particularly in SOI substrate manufacturing, highlight his innovative spirit and dedication to advancing the industry. His patents and collaborations reflect a commitment to excellence and a drive to push the boundaries of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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