The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 1997
Filed:
Mar. 13, 1995
Sadao Nakashima, Tokyo, JP;
Katsutoshi Izumi, Tokyo, JP;
Norihiko Ohwada, Musashino, JP;
Tatsuhiko Katayama, Hiratsuka, JP;
Komatsu Electronic Metals Co., Ltd., Kanagawa, JP;
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
NTT Electronics Technology Corporation, Tokyo, JP;
Abstract
A method of producing an SOI substrate having a single-crystal silicon layer on a buried oxide layer in an electrically insulating state from the substrate by implanting oxygen ions into a single crystal silicon substrate and practicing an anneal processing in an inert gas atmosphere at high temperatures to form the buried oxide layer. After the anneal processing in which the thickness of the buried oxide layer becomes a theoretical value in conformity with the thickness of the buried oxide layer formed by the implanted oxygen, the oxidation processing of the substrate is carried out in a high temperature oxygen atmosphere.