Norihiko Ohwada

Title: Norihiko Ohwada: Innovator in Semiconductor Technology

Introduction

Norihiko Ohwada is a prominent inventor based in Musashino, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His innovative work focuses on methods for producing silicon-on-insulator (SOI) substrates and semiconductor devices.

Latest Patents

One of his latest patents is titled "SOI substrate and method of producing the same." This patent describes a method for producing an SOI substrate that features a single-crystal silicon layer on a buried oxide layer. The process involves implanting oxygen ions into a single crystal silicon substrate and conducting anneal processing in an inert gas atmosphere at high temperatures. This results in the formation of the buried oxide layer. Following this, oxidation processing is performed in a high-temperature oxygen atmosphere to achieve the desired thickness of the buried oxide layer.

Another notable patent is the "Method of making semiconductor device having SIMOX structure." This patent outlines a process where a SIMOX substrate undergoes high-temperature oxidation treatment after forming a mask-pattern to shield specific electrodes from oxidation. This technique enhances the thickness of the buffed oxide layer, allowing for the production of MOSFETs with improved operational speeds and reduced parasitic capacitance.

Career Highlights

Norihiko Ohwada has worked with several notable companies throughout his career, including Komatsu Electronic Metals Co., Ltd. and Nippon Telegraph and Telephone Corporation. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Ohwada has collaborated with several professionals in his field, including Sadao Nakashima and Tatsuhiko Katayama. These collaborations have likely fostered an environment of innovation and knowledge sharing, further enhancing his contributions to semiconductor technology.

Conclusion

Norihiko Ohwada's work in semiconductor technology, particularly in the development of SOI substrates and SIMOX structures, showcases his innovative spirit and technical expertise. His patents reflect a commitment to advancing the field and improving semiconductor device performance.