Nippon Telegraph and Telephone Corporation

Komatsu Electronic Metals Co., Ltd.

Ntt Electronics Technology Corporation

Nit Electronics Technology Corporation

Sadao Nakashima

Katsutoshi Izumi

Tatsuhiko Katayama

Norihiko Ohwada

Shinji Nakamura

Tadao Takeda

Toshiaki Tsuchiya

Terukazu Ohno

Tetsushi Sakai

Yuichi Kado

Takemi Ueki

A method of manufacturing an SOI substrate uses an SOI substrate having a first single-crystal silicon layer, an insulating layer formed on the first single-crystal silicon layer, and a second single-crystal silicon layer formed on the insulating layer. The surface of the second single-crystal silicon layer is thermally oxidized. The second single-crystal silicon layer is controlled to have a predetermined thickness by removing the thermally oxidized surface. This step controlling the second single-crystal silicon layer to have a predetermined thickness includes the step of eliminating, by annealing, a stacking fault formed by the thermal oxidation.

Method of manufacturing SOI substrate

A method of producing an SOI substrate having a single-crystal silicon layer on a buried oxide layer in an electrically insulating state from the substrate by implanting oxygen ions into a single crystal silicon substrate and practicing an anneal processing in an inert gas atmosphere at high temperatures to form the buried oxide layer. After the anneal processing in which the thickness of the buried oxide layer becomes a theoretical value in conformity with the thickness of the buried oxide layer formed by the implanted oxygen, the oxidation processing of the substrate is carried out in a high temperature oxygen atmosphere.

SOI substrate and method of producing the same

A SIMOX substrate 1 is processed through high temperature oxidation treatment after forming a mask-pattern 3 to shield specified electrodes from oxidation in order to increase partly a thickness of a buffed oxide layer 2 to form an area 4. Next, after an oxide film is removed from the surface of the substrate and LOCOS separation is practiced, MOSFET is produced by fabricating a source S and a drain D on the area 4 or the buffed oxide layer 2. Since the buried oxide layer corresponding to electrodes parts influenced by disadvantages of parasitic capacitance are thickened, an operation speed of an inverter is not much decreased and since mean thickness of the buried oxide layer can be thinner, a decrease of a drain electric current by negative electrical resistance can be suppressed. Furthermore, since the thickness of the buffed oxide layer can be controlled in response to each device, plural devices having different breakdown voltages are formed together on the same substrate.

Method of making semiconductor device having SIMOX structure

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Tokyo, Japan

Sadao Nakashima