Kokubunji, Japan

Ryuichi Izawa


Average Co-Inventor Count = 6.9

ph-index = 5

Forward Citations = 102(Granted Patents)


Location History:

  • Kokubunji, JP (1981 - 1991)
  • Kokubungi, JP (1994)

Company Filing History:


Years Active: 1981-1994

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6 patents (USPTO):Explore Patents

Title: Ryuichi Izawa: Innovator in Semiconductor Technology

Introduction

Ryuichi Izawa is a prominent inventor based in Kokubunji, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work focuses on innovative gate circuits and semiconductor integrated circuit devices.

Latest Patents

One of his latest patents is a novel gate circuit that includes a first semiconductor switch with main terminals connected between a first potential level and an output node. This switch holds a high impedance state in response to an input signal with two logic levels, changing its impedance state only during a transient period. Another significant patent involves a semiconductor device with a high density and microstructure, designed to achieve high breakdown voltage and speed even with low supply voltage. This device features a gate insulating film and a MOS transistor with a unique gate electrode structure that allows for controlled overlap between the gate and the drain.

Career Highlights

Ryuichi Izawa has worked with notable companies such as Hitachi, Ltd. and Hitachi Denshi Kabushiki Kaisha. His experience in these organizations has contributed to his expertise in semiconductor technologies and innovations.

Collaborations

Throughout his career, Ryuichi has collaborated with esteemed colleagues, including Iwao Takemoto and Masakazu Aoki. These partnerships have fostered advancements in semiconductor research and development.

Conclusion

Ryuichi Izawa's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His innovative approaches continue to shape the future of electronic devices.

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