The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 1982
Filed:
Nov. 14, 1980
Shinya Ohba, Kokubunji, JP;
Shoji Hanamura, Kokubunji, JP;
Toshifumi Ozaki, Tokyo, JP;
Masaharu Kubo, Hachioji, JP;
Masaaki Nakai, Kodaira, JP;
Kenji Takahashi, Kodaira, JP;
Masakazu Aoki, Kodaira, JP;
Iwao Takemoto, Tokyo, JP;
Haruhisa Ando, Hachioji, JP;
Ryuichi Izawa, Kokubunji, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A solid-state imaging device wherein a MOS sensor is employed for a photosensor part, a CTD shift register is employed for a read-out circuit, first and second transfer gates are connected between vertical signal output lines and the CTD, and a reset gate is connected between a juncture of the first and second transfer gates and a reset voltage line. A method is adopted in which signal outputs of a plurality of rows are transferred to the CTD in a horizontal blanking period, and signals of a plurality of rows are simultaneously read out in a horizontal scanning period. At the signal transfer, bias charges are dumped into the vertical signal output lines from the CTD, and mixed charges consisting of the bias charges and signal charges are transferred to the CTD. Thereafter, the signals are read out.