Tokyo, Japan

Ryota Suewaka

USPTO Granted Patents = 7 

Average Co-Inventor Count = 2.2

ph-index = 1

Forward Citations = 8(Granted Patents)


Location History:

  • Fukuoka, JP (2021)
  • Tokyo, JP (2012 - 2022)

Company Filing History:


Years Active: 2012-2025

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7 patents (USPTO):Explore Patents

Title: Innovations of Ryota Suewaka in Silicon Crystal Production

Introduction

Ryota Suewaka is a prominent inventor based in Tokyo, Japan, known for his significant contributions to the field of silicon crystal production. With a total of seven patents to his name, he has made remarkable advancements that enhance the efficiency and quality of silicon single crystals.

Latest Patents

One of his latest patents is a method of producing a silicon single crystal based on concentration profiles of vacancies and interstitial silicon atoms during the pulling of a silicon single crystal by the Czochralski process. This innovation includes a point defect simulator that determines the distribution of point defects in a silicon single crystal while considering the thermal stress of the growing crystal. The simulator calculates concentration profiles of vacancies and interstitial silicon using a convection-diffusion equation, incorporating stress coefficients as fitting parameters.

Another notable patent involves a heat shielding member, a single crystal pulling apparatus, and a method for producing a single crystal silicon ingot. This invention aims to expand the margin of the crystal pulling rate, ensuring the production of defect-free single crystal silicon. The heat shielding member features a cylindrical tubular portion surrounding the outer surface of the silicon ingot, along with a ring-shaped projecting portion that includes a heat insulating material.

Career Highlights

Throughout his career, Ryota Suewaka has worked with notable companies such as Sumco Corporation and Elpida Memory, Inc. His experience in these organizations has contributed to his expertise in silicon crystal technology and innovation.

Collaborations

Ryota has collaborated with esteemed colleagues, including Yoshitaka Nakamura and Kenji Komeda, further enhancing his work in the field of silicon crystal production.

Conclusion

Ryota Suewaka's innovative patents and career achievements highlight his significant role in advancing silicon crystal technology. His contributions continue to impact the industry positively, paving the way for future developments in this essential field.

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