The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2025
Filed:
Aug. 12, 2020
Sumco Corporation, Tokyo, JP;
Ryota Suewaka, Tokyo, JP;
SUMCO CORPORATION, Tokyo, JP;
Abstract
Provided is a point detect simulator which makes it possible to determine the distribution of point defects in a silicon single crystal in consideration of the thermal stress of the silicon single crystal being grown. A point defect simulatoris a point defect simulator calculating the concentration profiles of vacancies and interstitial silicon during pulling of a silicon single crystal using a convection-diffusion equation reflecting the consideration of thermal stress in the silicon single crystal, and includes an analysis unit used to fit calculation results to experimental results using stress coefficients that are the coefficients of stress terms as a fitting parameter.