The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2020
Filed:
May. 27, 2018
Applicant:
Longitude Semiconductor S.a.r.l., Luxembourg, LU;
Inventors:
Yoshitaka Nakamura, Tokyo, JP;
Kenji Komeda, Tokyo, JP;
Ryota Suewaka, Tokyo, JP;
Noriaki Ikeda, Tokyo, JP;
Assignee:
Longitude Licensing Limited, Dublin, IE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2005.12); H01L 49/02 (2005.12); H01L 27/02 (2005.12); H01L 29/78 (2005.12);
U.S. Cl.
CPC ...
H01L 28/91 (2012.12); H01L 27/0207 (2012.12); H01L 27/10808 (2012.12); H01L 27/10835 (2012.12); H01L 27/10852 (2012.12); H01L 29/78 (2012.12);
Abstract
A semiconductor device comprises a memory cell region, a peripheral circuit region and a boundary region. In the memory cell region, a concave lower electrode and a foundation layer have a same uppermost surface positioned in a height of H above the plane-A. In the boundary region, one concave lower conductive region and a foundation layer have a same uppermost surface positioned in a height of H above the plane-A.