The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2020
Filed:
Nov. 01, 2016
Applicant:
Sumco Corporation, Tokyo, JP;
Inventors:
Kaoru Kajiwara, Tokyo, JP;
Ryota Suewaka, Tokyo, JP;
Hideki Tanaka, Tokyo, JP;
Takahiro Kanehara, Tokyo, JP;
Assignee:
SUMCO CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/14 (2006.01); C30B 29/06 (2006.01); C30B 15/10 (2006.01);
U.S. Cl.
CPC ...
C30B 15/14 (2013.01); C30B 15/10 (2013.01); C30B 29/06 (2013.01);
Abstract
A method of manufacturing a single crystal is provided with a raw material melting step of heating a silicon raw material in a quartz crucible using a carbon heater to generate a silicon melt; and a crystal pull-up step of pulling up a single crystal from the silicon melt generated by the raw material melting step, wherein the silicon raw material is heated with the maximum surface temperature of a first part of the heater that is positioned above at least the upper end of the quartz crucible maintained below 1500° C. in the raw material melting step.