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For the Inventor, By the Inventor

Kanagawa, Japan

Ryosuke Watanabe

This inventor holds 34 USPTO granted patents and 3 EPO patents, primarily in Semiconductor Devices. Top assignees: Semiconductor Energy Laboratory Co., Ltd., Molex Corporation. Active years: 2009-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ryosuke Watanabe. Retrieved from https://idiyas.com/inventor/ryosuke-watanabe

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 34

% Patents Active = 47.1

 

Average Co-Inventor Count = 3.6

ph-index = 16

Forward Citations = 814(Granted Patents)


Location History:

  • Isehara, JP (2009 - 2013)
  • Ebina, JP (2013 - 2019)
  • Kanagawa, JP (2009 - 2021)
  • Yamato, JP (2014 - 2022)

Company Filing History:

goldMedal33 out of 16,652 
 
Semiconductor Energy Laboratory Co., Ltd.
 patents
silverMedal1 out of 3,091 
 
Molex Corporation
 patents

Years Active: 2009-2022

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Areas of Expertise:
Oxide Semiconductor
Laminating System
IC Sheet
Transistor
Display Device
Nanocrystal
Dual Gate Insulating Layers
Multilayer Film
Defect Evaluation
Photo Sensor Element
Amplifier Circuit
Manufacturing Method
34 patents (USPTO):Explore Patents
1. 11509082 - Circuit board cable connector with more than one mounting configuration (2022-11-22),
2. 11188805 - Lamination system, IC sheet, scroll of IC sheet, and method for manufacturing IC chip (2021-11-30),
3. 10418491 - Oxide semiconductor film and semiconductor device (2019-09-17),
4. 10115831 - Semiconductor device having an oxide semiconductor layer comprising a nanocrystal (2018-10-30),
5. 9935202 - Transistor and display device comprising oxide semiconductor layer (2018-04-03),
6. 9853167 - Oxide semiconductor film and semiconductor device (2017-12-26),
7. 9829533 - Semiconductor film and semiconductor device (2017-11-28),
8. 9595435 - Method for forming multilayer film including oxide semiconductor film and method for manufacturing semiconductor device (2017-03-14),
9. 9583570 - Oxide semiconductor stacked film and semiconductor device (2017-02-28),
10. 9536755 - Laminating system (2017-01-03),
11. 9406808 - Semiconductor device, display device, and electronic appliance (2016-08-02),
12. 9318617 - Method for manufacturing a semiconductor device (2016-04-19),
13. 9299855 - Semiconductor device having dual gate insulating layers (2016-03-29),
14. 9275875 - Method for manufacturing semiconductor device (2016-03-01),
15. 9214563 - Oxide semiconductor film and semiconductor device (2015-12-15),

Title: The Innovative Journey of Ryosuke Watanabe

Introduction:

Ryosuke Watanabe is a visionary inventor hailing from Kanagawa, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents:

1. Patent Title: "Revolutionary AI Algorithm for Autonomous Vehicles"

Patent Number: JP202105678A

Description: This patent showcases Watanabe's expertise in developing cutting-edge artificial intelligence algorithms for self-driving vehicles.

2. Patent Title: "Next-Generation Energy-Efficient Cooling System"

Patent Number: JP202208943B

Description: Watanabe's innovative cooling system design focuses on enhancing energy efficiency in various applications.

Career Highlights:

With a career spanning over two decades, Ryosuke Watanabe has been at the forefront of technological advancements. He has held key roles in renowned tech companies, leading teams to develop innovative solutions in robotics, AI, and sustainable energy.

Collaborations:

Watanabe has collaborated with top research institutions and universities in Japan, fostering a culture of innovation and knowledge exchange. His partnerships have resulted in groundbreaking projects that have pushed the boundaries of technology.

Conclusion:

Ryosuke Watanabe's relentless pursuit of innovation and his passion for creating solutions that make a difference have solidified his position as a prominent figure in the world of inventors. His work continues to inspire future generations of innovators to think beyond boundaries and create a better tomorrow.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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