Semiconductor Energy Laboratory Co., Ltd.

Molex Corporation

Ryosuke Watanabe

Shunpei Yamazaki

Junichiro Sakata

Kengo Akimoto

Takuya Hirohashi

Masayuki Sakakura

Akiharu Miyanaga

Hideyuki Kishida

Masashi Tsubuku

Jun Koyama

Hidekazu Takahashi

Takuya Tsurume

Masashi Oota

Noritaka Ishihara

Junya Maruyama

Masafumi Morisue

Koki Inoue

Toru Takayama

Naoto Kusumoto

Takanori Matsuzaki

Osamu Nakamura

Takeshi Osada

Kazuo Nishi

Daiki Yamada

Eiji Sugiyama

Suzunosuke Hiraishi

Susumu Okazaki

Yasuyuki Arai

Masahiro Takahashi

Yasuko Watanabe

Motoki Nakashima

Takayuki Inoue

Ayako Matsumoto

Miyuki Higuchi

Atsushi Ishikawa

To provide a connector for which cost can be reduced. A first connectorincludes first metal membersA that function as terminals and second metal membersB that function as reinforcing brackets. Each first metal memberA and second metal memberB include a main body parta first edge parta second edge partand a third edge partA first edge partof the first metal memberA is positioned on the upper side of the main body partthat is the side that receives the mating connector. The second metal memberB is retained in a different orientation from the first metal memberA. The first edge partof the second metal memberB is positioned below the main body partof the second metal memberB and can be attached to a first circuit board Barranged on the lower side of the first connector. The third edge partof the second metal memberB is positioned more in the Ydirection than the main body partof the second metal memberB and can be attached to the second circuit board Barranged in the Ydirection with respect to the first connector

Circuit board cable connector with more than one mounting configuration

Thin film integrated circuits are peeled from a substrate and the peeled thin film integrated circuits are sealed, efficiently in order to improve manufacturing yields. The present invention provides laminating system comprising transporting means for transporting a substrate provided with a plurality of thin film integrated circuits; first peeling means for bonding first surfaces of the thin film integrated circuits to a first sheet member to peel the thin film integrated circuits from the substrate; second peeling means for bonding second surfaces of the thin film integrated circuits to a second sheet member to peel the thin film integrated circuits from the first sheet member; and sealing means for interposing the thin film integrated circuits between the second sheet member and a third sheet member to seal the thin film integrated circuit with the second sheet member and the third sheet member.

Lamination system, IC sheet, scroll of IC sheet, and method for manufacturing IC chip

It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

Oxide semiconductor film and semiconductor device

In a channel protected thin film transistor in which a channel formation region is formed using an oxide semiconductor, an oxide semiconductor layer which is dehydrated or dehydrogenated by a heat treatment is used as an active layer, a crystal region including nanocrystals is included in a superficial portion in the channel formation region, and the rest portion is amorphous or is formed of a mixture of amorphousness/non-crystals and microcrystals, where an amorphous region is dotted with microcrystals. By using an oxide semiconductor layer having such a structure, a change to an n-type caused by entry of moisture or elimination of oxygen to or from the superficial portion and generation of a parasitic channel can be prevented and a contact resistance with a source and drain electrodes can be reduced.

Semiconductor device having an oxide semiconductor layer comprising a nanocrystal

To provide a transistor having a favorable electric characteristics and high reliability and a display device including the transistor. The transistor is a bottom-gate transistor formed using an oxide semiconductor for a channel region. An oxide semiconductor layer subjected to dehydration or dehydrogenation through heat treatment is used as an active layer. The active layer includes a first region of a superficial portion microcrystallized and a second region of the rest portion. By using the oxide semiconductor layer having such a structure, a change to an n-type, which is attributed to entry of moisture to the superficial portion or elimination of oxygen from the superficial portion, and generation of a parasitic channel can be suppressed. In addition, contact resistance between the oxide semiconductor layer and source and drain electrodes can be reduced.

Transistor and display device comprising oxide semiconductor layer

An oxide semiconductor film having high stability with respect to light irradiation or a semiconductor device having high stability with respect to light irradiation is provided. One embodiment of the present invention is a semiconductor film including an oxide in which light absorption is observed by a constant photocurrent method (CPM) in a wavelength range of 400 nm to 800 nm, and in which an absorption coefficient of a defect level, which is obtained by removing light absorption due to a band tail from the light absorption, is lower than or equal to 5&#xd7;10/cm. Alternatively, a semiconductor device is manufactured using the semiconductor film.

Semiconductor film and semiconductor device

To form an oxide semiconductor film with a low density of localized levels. To improve electric characteristics of a semiconductor device including the oxide semiconductor. After oxygen is added to an oxide film containing In or Ga in contact with an oxide semiconductor film functioning as a channel, heat treatment is performed to make oxygen in the oxide film containing In or Ga transfer to the oxide semiconductor film functioning as a channel, so that the amount of oxygen vacancies in the oxide semiconductor film is reduced. Further, an oxide film containing In or Ga is formed, oxygen is added to the oxide film, an oxide semiconductor film is formed over the oxide film, and then heat treatment is performed.

Method for forming multilayer film including oxide semiconductor film and method for manufacturing semiconductor device

An oxide semiconductor stacked film which does not easily cause a variation in electrical characteristics of a transistor and has high stability is provided. Further, a transistor which includes the oxide semiconductor stacked film in its channel formation region and has stable electrical characteristics is provided. An oxide semiconductor stacked film includes a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer which are sequentially stacked and each of which contains indium, gallium, and zinc. The content percentage of indium in the second oxide semiconductor layer is higher than that in the first oxide semiconductor layer and the third oxide semiconductor layer, and the absorption coefficient of the oxide semiconductor stacked film, which is measured by the CPM, is lower than or equal to 3&#xd7;10/cm in an energy range of 1.5 eV to 2.3 eV.

Oxide semiconductor stacked film and semiconductor device

It is an object of the invention to improve the production efficiency in sealing a thin film integrated circuit and to prevent the damage and break. Further, it is another object of the invention to prevent a thin film integrated circuit from being damaged in shipment and to make it easier to handle the thin film integrated circuit. The invention provides a laminating system in which rollers are used for supplying a substrate for sealing, receiving IC chips, separating, and sealing. The separation, sealing, and reception of a plurality of thin film integrated circuits can be carried out continuously by rotating the rollers; thus, the production efficiency can be extremely improved. Further, the thin film integrated circuits can be easily sealed since a pair of rollers opposite to each other is used.

Laminating system

Semiconductor device, display device, and electronic appliance

Method for manufacturing a semiconductor device

A semiconductor device includes a semiconductor layer, a gate electrode overlapping with the semiconductor layer, a first gate insulating layer between the semiconductor layer and the gate electrode, and a second gate insulating layer between the first gate insulating layer and the gate electrode. The first gate insulating layer includes an oxide in which the nitrogen content is lower than or equal to 5 at. %, and the second gate insulating layer includes charge trap states.

Semiconductor device having dual gate insulating layers

An object is to provide a semiconductor device including an oxide semiconductor, which has stable electrical characteristics and high reliability. In a manufacturing process of a bottom-gate transistor including an oxide semiconductor layer, heat treatment in an atmosphere containing oxygen and heat treatment in vacuum are sequentially performed for dehydration or dehydrogenation of the oxide semiconductor layer. In addition, irradiation with light having a short wavelength is performed concurrently with the heat treatment, whereby elimination of hydrogen, OH, or the like is promoted. A transistor including an oxide semiconductor layer on which dehydration or dehydrogenation treatment is performed through such heat treatment has improved stability, so that variation in electrical characteristics of the transistor due to light irradiation or a bias-temperature stress (BT) test is suppressed.

Method for manufacturing semiconductor device

Growing community of inventors

Kanagawa, Japan

Ryosuke Watanabe